ABSTRACT
III-V semiconductors have attracted the attention of device engineers for application in MOSFETs since 1960s. However, until recently, the attempts to employ III-V semiconductors in MOSFET technology have been largely unsuccessful, primarily because of the difficulty in obtaining a high-quality III-V semiconductor-dielectric interface. During the last decade, researchers have been successful in obtaining reasonably good-quality III-V semiconductordielectric interfaces using novel processing techniques and these successes have reignited the interest of device researchers in III-V MOSFETs.
