ABSTRACT
Since the early 2000s, there has been tremendous progress in nanowire research. Various groups are exploring the possibility of applying novel properties of semiconductor nanowires for nanoelectronics. The intrinsic smallness of nanowires makes them a natural choice for continuously shrinking transistors. The tight gate control achievable in nanowire transistors is particularly beneficial in ameliorating short channel effects. The bottom-up synthesis methods possible for nanowires open doors for realizing structures that are extremely difficult to obtain using conventional top-down approaches. This has led device researchers into investigating nanowire FETs (NWFET) and significant advancements have been made in recent years.
