ABSTRACT
TFETs are being investigated intensely using experimental setups and numerical simulations. Our understanding of TFETs has been enriched immensely during the last ten years. As we have seen in previous chapters, several novel TFET device architectures employing different materials have been proposed and are being actively investigated. As a result, the electrical characteristics of TFETs have been improving consistently over the years. However, in order to apply TFETs for various applications, it is essential that appropriate models of TFETs are developed. The models not only give a physical insight into the working of the device, but are also essential for carrying out device-level optimization and circuit-level analysis. The models for TFETs can be hooked into the circuit simulators to explore various applications of TFETs and evaluate the competitive advantages of TFETs over conventional MOSFETs and other exploratory devices. The models also facilitate abstracting out the details of the device and exploring various trade-offs by performing analysis at the circuit and system levels.
