chapter  9
24 Pages

PRINCIPLES AND OPTIMIZATION OF GAN HEMTS

Two-dimensional electron gases (2DEGs) with high density and high electron mobility can form in AlGaN/GaN heterostructures used in HEMTs without intentional doping owing to strong piezoelectric and spontaneous polarization, and it is the high conductivity of the 2DEG and the high breakdown voltage of AlGaN/GaN heterostructures that make the GaN HEMT microwave power devices possible. Systematic theories of HEMT principles and structure optimization have been available for the conventional GaAs material system. This chapter introduces the principles of the GaN HEMT and gives some examples of optimization of the field plate (FP) structure of GaN HEMTs.