chapter  2
40 Pages

PROPERTIES OF GROUP III NITRIDE SEMICONDUCTOR MATERIALS

Group III nitride semiconductor materials contain mainly the binary compounds of AlN, GaN, and InN, and the ternary and quaternary alloys (AlGaN, InGaN, and AlInGaN) composed by them. Since the material structure of most Group III nitride electronic devices is the heterojunction, this chapter focuses on the heterojunctionrelated material properties such as the crystal structure, band structure, electron transport, and polarization effect. Some methods for nitride property measurements are also introduced.