Static and Dynamic Analysis of Organic All-p, Organic Com plementary, and Hybrid Comple men tary Inverter Circuits
The mobility of n-type organic semiconductors (OSCs) is often lower in comparison to the p-type due to their large band gaps. Difficulty in obtaining a high mobility n-type organic transistor forced researchers to propose an all p-type organic inverter circuit [1,2]. However, an all p-type inverter also faces challenges such as low voltage swing, poor balance between pull-up and pulldown operation, high power dissipation, and low noise margins. Taking these limitations into account, hybrid complementary circuits have been proposed. Dodabalapur et al. first suggested hybrid complementary technology by replacing an n-type organic transistor with an inorganic hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) . Development of organic and hybrid circuits, using simple and low-cost process techniques, permits the integration of complete digital circuits.