ABSTRACT
With the rise of graphene research since 2004, the past few years have witnessed rapid progress in exploiting graphene as the material for the next generation of dramatically faster, more energy-efficient electronics [1-3]. A sheet of graphene not only conducts electricity and dissipates heat much more efficiently than silicon, the material most commonly found in today’s computer chips, its fascinating optical and mechanical properties have ignited enormous interdisciplinary interest in the field of physics, chemistry, and materials science. However, the fact that graphene is a zero-band gap semimetal poses a major problem for its practical applications in making high-performance field-effect transistors (FETs) [2,3].
