ABSTRACT
Defect engineering in heteroepitaxial layers refers to efforts to control the densities, types, or arrangements of defects, especially dislocations. The common approaches to defect engineering involve the use of buffer layers, dislocation compensation, patterned substrates, patterning and annealing, epitaxial lateral overgrowth (ELO), or compliant substrates. Some of these techniques, such as buffer layers, patterning with annealing, and ELO, are intended to remove existing defects from relaxed heteroepitaxial layers. Others, such as reduced area growth, nanoheteroepitaxy (NHE), and compliant substrates, are designed to prevent the introduction of dislocations in the first place. This chapter presents the theory and practice of these common defect engineering approaches.
