ABSTRACT
Of the many available epitaxial growth techniques, molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE) have emerged as general-purpose tools for heteroepitaxial research and commercial production. This is because these methods afford tremendous flexibility and the ability to deposit thin layers and complex multilayered structures with precise control and excellent uniformity. Together, MBE and MOVPE account for virtually all production of compound semiconductor devices today.
