ABSTRACT
Rapid hrinkage of MOSFET dimensions led exponential progress in VLSI technology in the past two decades, which becomes realizable owing to development of existing microelectronics technology. But recently, the progress is far deviated from Moore’s law due to the limitations exhibited by the growth materials, and the limitations of fabrication set-up. Thus, in order to continue the miniaturization of integrated circuits following Moore’s law well in the present day, design of microelectronic devices should be replaced with novel designs that take advantage of the quantum mechanical effects, which will also speak in favor of lower power consumption. Solid-state quantum nanoelectronic devices are the nearest alternative to maintain the continuous trend of increasing packing density and speed of information processing. Among the different low-dimensional quantummechanical devices, resonant tunneling devices are found the interest of both theoretical (GoldhaberGordon et al., 1997) and experimental researchers (Sen et al., 1987, Maranowski et al., 2000) for the past decade owing to its novel electronic properties (Esaki et al., 1974), and also its less complex development mechanism which is supported by the controlled microelectronic growth techniques with various combination of semiconducting materials (Talale et al., 2008, Yamamoto 1987). Electrical and optical properties of these heterostructure devices can be computed from the knowledge of quantum transport processes, and precise estimation of transmission coefficient is essential for the device with incorporation of physical parameters (Simion et al., 2000, Ghatak et al.,
In this present paper, current density is analytically computed from the knowledge of tunneling probability, and this calculation is based on the estimation of wave vector and its propagation through different layers. Barrier and well dimensions are changes within range of interest, and composition of barrier material is also varied to see the effect on current density. Occurrence of negative differential resistances is seen from the current density profile. Result will play crucial role for design of resonant tunneling devices.
