ABSTRACT
ABSTRACT: In order to fabricate a SMR, SiO2/Mo are chosen as the low/high acoustic impedance materials to form the Bragg reflector, and the Aluminum nitride (AlN) is adopted as the piezoelectric layer because of its high acoustic wave velocity of 10,400 m/s. To obtain the resonant frequency of about 2.5 GHz, the specific thicknesses of Mo, SiO2, and AlN are simulated for thin film deposition processes. In addition, to obtain optimized SMR characteristics for wireless communication applications, the deposition condition of AlN thin films is investigated. The SMR device shows a resonant frequency of 1.39 GHz (shear mode) and 2.48 GHz (longitudinal mode).
