ABSTRACT

We report the effect of simultaneously evaporated and oxidized thin films of aluminum (Al)- and zinc (Zn)-containing different atomic weight percentages of Al (2, 4, and 6%) in an atmosphere of nitrogen. Grazing incidence angle X-ray diffraction technique observed that the crystallinity remains unaffected with increase in dopant concentration and the samples not showing special growth and have a typical nanocrystalline structures. Atomic force microscopy images revealed aggregation of the grains and Raman peaks claims hexagonal wurtzite structure with good crystal quality. Samples showed decreased optical transmittance with increase in Al concentration. Photoluminescence analysis indicated that Al-doped ZnO thin films did not introduce much defects and preserved good material quality with a high luminescence. The electrical resistance decreased with increase in temperature, showing semiconducting behavior.