ABSTRACT
This chapter describes the National Bureau of Standards’s Resistivity-Dopant Density Relationship for Boron-Doped Silicon, relating the context in which the publication appeared, its impact on science, technology, and the general public, and brief details about the lives and work of the author. Resistivity-Dopant Density Relationship for Boron-Doped Silicon documents the work done from about 1975 to 1980 to obtain a more accurate relationship between the resistivity and dopant density of silicon. The conversion between these two material properties is widely used in the semiconductor industry since silicon is the primary material which has powered the information age. To model the processing of an integrated circuit, the conversion is used to calculate the surface carrier concentration of a diffused layer from the sheet resistance—junction depth product and to determine the dopant density profile from incremental sheet resistance measurements.
