ABSTRACT
The scanning capacitance microscope micrograph of an n-MOS transistor implanted with As+ ions at an energy as low as 5keV is compared with the normal secondary ion mass spectroscopy (SIMS) profile. Then, in order to acquire the exact impurity distribution beneath the surface of the silicon, SIMS measurements are carried out at a lower energy than 1keV. As a result, in the ultra shallow region near the surface of the silicon, a direct comparison of inverted SCM data and SIMS profiles indicates that quantitative two-dimensional dopant profiling can be achieved by the SCM beyond 10nm resolution and for dopant concentrations around 1019cm-3.
