ABSTRACT
Heteroepitaxial growth of InN on GaN(0001) and on Si(111) has been studied using scanning tunnelling microscopy (STM) and atomic force microscopy (AFM) in order to elucidate the growth modes. InN/GaN grows in a 2D mode, despite the fact that there is an 11.2% lattice mismatch. When we grow InN on Si(l 11), we again observe 2D growth, with small islands of varying size. Surface reconstructions on the islands have been observed with atomic resolution. We observe different behaviour when we grow InN/GaN in the presence of silicon, which leads to a bimodal distribution of 3D islands.
