ABSTRACT
The near field response of a semiconductor nonostructure is theoretically investigated for the collection mode of the scanning near-field microscope (SNOM). We calculated the near-field distribution on the observation plane for several physical systems, in which the semiconductor nanostructure is approximated by a right-angled object with dielectric function including the contributions from the lattice and the free charge carriers. All calculations are carried out by using the self-consistent integral equation formalism. As a result we show that the near-field distribution is essentially dependent on the quantity of charge carriers.
