ABSTRACT
A number of methods for investigating the structure and composition of quantum dots are discussed, with particular emphasis on the modelling of QD compositional profiles. It is shown that the method of on-zone Bright field TEM imaging is sensitive to composition profiles, and the technique has been applied to alloy profiles in the Ge/Si and InGaAs/GaAs systems. Combining this technique with energy filtered imaging and x-ray profiles results in a refined QD growth model.
