ABSTRACT
GaN quantum wells embedded in Al0.13Ga0.87N layers have been studied by conventional, High Resolution and Energy Filtered Transmission Electron Microscopy. This set of quantum wells was analysed in order to determine the quality, the exact size and the chemical composition of the heterostructures. Such characteristics are crucial to analyse the optical measurements of such layers. It turns out that these quantum wells are also perfect test objects to determine the strength and limits of some transmission electron microscopy techniques. This last point is the subject of this paper.
