ABSTRACT
Microstructural defect observations of MQW structures, in GaN grown on sapphire by MOCVD, were carried out using transmission electron microscopy. Cross-sectional samples were prepared and a JEOL JEM-201 OF microscope used to investigate defects in the GaN/InGaN device system. Two sets of samples were observed each with variation in growth recipe. Plan-view observations of a single QW sample were carried out to investigate both threading dislocations and nanopipes. Atomic force microscopy has been used to understand the roughness of the final layers and the nature of general growth defects.
