Variations in the degree of order of GaN epilayer mosaic structure after Si doping

Comparative investigations of the 3-4 (μm thick undoped and Si doped (N _si i=10¹⁸-10²⁰cm⁻³) epitaxial layers have been carried out using traditional techniques and the multifractal analysis of AFM data. The direct dependence of the electron mobility on the degree of mosaic structure order of the GaN epilayers has been observed. The Si doping has been shown to change the charge state of the GaN epilayer surface, to reduce the potential barriers arising at the domain boundaries, and to increase the degree of order index of the mosaic structure.