ABSTRACT
A poly-silicon / titanium / iridium oxide / platinum barrier stack for integrated ferroelectric devices has been annealed in a highly oxygen-rich ambient for 90 min at 800°C. TEM investigations were performed on cross sections in a Philips CM200 FEG applying EDX mapping and electron spectroscopic imaging in order to detect barrier degradation down to nanometer scale. Pt/Ir interdiffusion and formation of oxygen-rich interlayers underneath the iridium oxide were found.
