ABSTRACT
Rare earth (RE) doped gallium nitride (GaN) structures offer potential for optical devices emitting in the visible spectral region. This chapter describes studies of Eu- and Er- ion implanted MOCYD grown GaN epilayers on sapphire using an electron probe micro-analyser modified to allow cathodoluminescence (CL) spectroscopy. Wavelength dispersive X-ray analysis is shown to be an accurate technique for quantifYing RE concentrations in GaN, down to ~ 0.06 atomic % and is complemented by CL acquired at the same time from the same microscopic region of sample. There is a long history of the use of RE doped solids for optoelectronics applications such as solid-state lasers and luminescent phosphors. Greater understanding and control of the properties of RE doped nitrides should be significant for the achievement of more optically efficient RE-based devices. RE composition depth profiles are presented for samples implanted at different energies and their optical properties explored using electron beam excitation.
