ABSTRACT
Secondary electron imaging of differently doped regions of p-n junctions in the scanning electron microscope has proven to be a powerful qualitative technique: quantitative two dimensional dopant profiling could be obtained if a reliable quantification procedure existed. To obtain reliable quantification, the influence of experimental conditions on the measured contrast values from doped p-n junctions in Si was investigated. The results point towards a substantial influence of sample charging and a less pronounced effect of electron-hole pair generation on the observed contrast. The chapter shows that the cleaving itself causes only a small contribution to the spread in the data, but experimental conditions like magnification scan speed, and electron beam current have a rather large influence on the observed contrast values. However, because of specimen charging, the contrast is a strong function of the magnification and scan speed.
