ABSTRACT
The scanning capacitance microscopy (SCM) provides a direct means of imaging source/drain profiles and dopant density mapping in semiconductor devices with nanometer resolution. This chapter illustrates the capability of SCM in metal oxide semiconducting field effect transistor characterisation, quantitative dopant profiling and failure analysis applications. It explains 80nm Si CMOS devices using SCM. For quantitative profiling, SCM measurements were performed on boron implanted sample. In device failure analysis, SCM revealed an anomaly in then-well region. The fundamental principle of SCM is based on the metal-oxide semiconductor concept. SCM is performed in an atomic force microscope (AFM) with an ultrahigh frequency resonant capacitance sensor connected to a grounded tip via a transmission line, which is attached to a UHF capacitance sensor. The tip of the AFM cantilever acts as the metal and a layer of insulating oxide is grown on top of the semiconductor sample.
