ABSTRACT
This chapter describes the microstructure analysis of the substrate/porous silicon carbide (PSC)/SiC epilayer crosssection by transmission electron microscope (TEM). A detailed cross-sectional TEM investigation of the microstructure of the porous layer fabricated by electrochemical etching of a 6H-SiC bulk substrate is presented. Highresolution electron microscopy reveals the existence of a disordered layer at the interface between crystalline SiC and the porous layer. Since the first report on electrochemical etching of bulk SiC crystal in hydrofluoric acid solution, much attention has been given to gaining a better understanding of the physical properties of the material commonly known as porous silicon carbide. The problem of producing perfect substrates for the fabrication of epitaxial technology-based electronic devices continues to exist. The pore morphology in the vicinity of the PSC/epilayer interface is mostly characterized by separated hexagon-shaped etch pits. Highresolution images of the pore crystalline-amorphous boundary show a gradual transition from a crystalline region to a completely amorphous one of the pore.
