ABSTRACT
This chapter shows the Metalorganic vapor phase epitaxy (MOVPE) growth conditions of InAs/GaAs quantum dots (QDs) with photoluminescence emission from 1.1 to 1.25 µm in a commercial 8×3" multiwafer reactor for the production of telecommunication devices. It describes techniques to improve the QD size uniformity and minimize the number of defects. MOVPE of QD has proven to be a highly desirable method for growing optoelectronic devices. MOVPE-grown QD lasers have shown promising performance at 1.14∼tm. The structures consist of one or ten layers of InAs QDs in GaAs barriers. In order to improve the QD size uniformity and minimize the number of larger dots, sample E was grown with a thin GaAs capping layer, covering the smaller QDs but leaving the top of the larger dots exposed.
