ABSTRACT
The formation of silicon (Si) quantum dots on silicon dioxide (SiO2) by chemical vapour deposition of Silane is investigated in the range from the sub-monolayer to the complete coverage with Si. Energy filtered transmission electron microscopy is used to measure the dot size distributions. It is shown that this technique allows the measurement of size distributions down to dimensions of about lnm. The analysis of Si quantum dots on oxidised substrates is an important capability, given the possibility that this system can be exploited to obtain new functions in novel devices for microelectronics and photonics. The analysis of Si quantum dots on oxidised substrates is an important capability, given the possibility that this system can be exploited to obtain new functions in novel devices for microelectronics and photonics. Given the high energy resolution of the system, the Si plasmon Joss is well separated from the SiO2 bulk Plasmon.
