ABSTRACT

Quantitative measurements of segregation efficiencies with their dependence upon growth parameters and growth techniques are important to minimize segregation. This chapter focuses on a variety of quantum well samples such as InGaAs/GaAs grown by molecular beam epitaxy and metal organic vapor phase epitaxy. The structures were analyzed by high-resolution transmission electron microscopy and composition profiles are determined on a near atomic scale. The chapter investigates segregation in a variety of semiconductor heterostructures grown by molecular beam epitaxy (MBE) and Metalorganic vapor phase epitaxy (MOVPE). It describes concentration profiles on a near atomic scale by high-resolution transmission electron microscopy using the composition evaluation by lattice fringe analysis method. Although MBE and MOVPE can be used to control the semiconductor growth on an atomic scale, kinetic growth effects such as segregation have to be taken into account. The growth interruption was performed to reduce excess Sb atoms in the growth chamber before the GaSh quantum wells are overgrown with GaAs.