ABSTRACT

This chapter examines the formation mechanism of typical extended defects in semiconductor heterostructures with heterovalent interfaces, namely pairs of stacking faults in pseudomorphic ZnSe epitaxial layers grown on GaAs(OOl) substrate, by means of high-resolution scanning electron microscopy and high-resolution transmission electron microscopy combined with first-principles energy calculations. It explores the relationship between the number density of the defects in an epitaxial layer and the morphology of the layer. The chapter discusses discuss a potential formation process of the defects. A stacking fault intersected the other one of the pair at the ZnSe/GaAs interface, forming an intersecting line on the interface. Around the intersecting line, Ga, As and Se atoms formed the specific reconstructed structure with relatively low formation energy, which well corresponds to the reconstructed surface structure on pre-growth GaAs substrates with additional Se atoms.