ABSTRACT
This chapter provides two different X-ray microdiffraction methods to define optical devices with highly brilliant synchrotron radiation. It demonstrates that the two methods were useful for the accurate-analysis of mask width dependent strain change and lattice strain distribution in selective area growth layers. Selective metal-organic vapor phase epitaxial (MOVPE) growth of lnGaAsP layers on a narrow stripe region along the direction of an InP substrate between a pair of dielectric stripe masks is an attractive method for fabricating integrated photonic devices. The lnGaAsP layers and InP cap layers were grown by atmospheric pressure MOVPE in the unmasked regions. The direction of the sample was set parallel to the horizontal plane on the sample stage, to scan the measuring position across the narrow-stripe region of selectively grown layers. The chapter examines the strain distribution in selectively grown layers using the high-spatial-resolution microdiffraction system.
