Atomic structure of Mg-induced pyramidal inversion domains in bulk GaN

The nature ofMg-induced pyramidal defects in bulk GaN is established: they are inversion domains as in metalorganic vapor phase epitaxy-grown Mg-doped films. A high resolution transmission electron microscopy study of the inversion domain boundaries (IDB) is presented. We proposed atomic models for both the basal and inclined IDBs. The n-type doping of GaN, which is realized by introducing substitutional Si, is easy and controllable up to a few 10 19cm·3 p-type doping remains a difficult problem. The chapter presents a high resolution transmission electron microscopy study of the atomic structure of the pyramidal inversion domains (PID). It proposes models for both the basal and inclined IDB. In metalorganic vapor phase epitaxy-grown Mg doped GaN, the size of the PIDs is small: 2-30 nm. Atomic Structure of the Basal ID An Mg enrichment of the GaN structure may lead to the formation of a Mg-N compound.