ABSTRACT
The electronic properties of N/GaN quantum wells depend significantly on tiie exposure dose of low-energy electron-beam irradiation (LEEBI). LEEBI of Mg-doped GaN layers grown by metalorganic chemical vapor deposition causes a substantial decrease of the resistivity and an increase of the luminescence efficiency in those layers. The electron exposure causes an increase of the intensity by more than an order of d magnitude, and the exciton line exhibits a red-shift as: ll1o well as broadening towards lower energy values. A possible explanation for the evolution of the field distribution during LEEBI is the passivation of acceptors in the p-type layer by electron-beam-induced diffusion of hydrogen into the region of the p-n junction. The electric-field distribution in a p-n structure is changed towards the flat-band conditions during LEEBI, indicating electron-beam-induced passivation of acceptors in the p-type layer.
