ABSTRACT
Electron energy loss spectrometry (EELS) studies were carried out on epitaxially grown silicon (Si) thin films which were deposited at low temperatures on Si substrates by electron cyclotron resonance chemical vapour deposition. The films were grown as a first step in order to realise crystalline thin Si film solar cells on glass substrates. By means of electron diffraction in a transmission electron microscope local polycrystalline defects in the films were investigated. Using transmission electron microscopes with high energy resolved sources, such as cold field emitter electron guns or conventional field emitters with a pre-specimen monochromator, resolutions in EEL spectra of better than 0.2eV can easily be reached. With installations small core level shifts are observed at grain boundaries. In plan view projection all investigated defect regions have a square shape and consist of needle-like crystals. The crystalline needles are perpendicular to the interface between substrate and film.
