ABSTRACT
Deep level transient Fourier spectroscopy (DLTFS) has been performed on p-n diodes of GaN. Typical deep level spectra on the various diodes realized on the same wafer demonstrate three electron trap levels, El, E2 and E3. The trap concentration and capture cross section of each level have been calculated from the measured data. As a result of the successive DLTFS scans on a number of diodes prepared on the same wafer, the level E2 disappears after the 4'h scan, similarly the corresponding amplitudes of the levels E1 and E3 are reduced by a factor of two with respect to the first scan. The trap concentration NT of the each observed levels E1, E2 and E3 as measured from the first DLTFS scan is found to be 8.7xl0 14, 2.4xl 015 , and 4.3xl0 15 cm·3 respectively. E1 and E3 are related to charged and neutral vacancies respectively while E2 is related to the charged N-interstitials.
