ABSTRACT
This chapter investigates the fastest Field Effect Transistors (FET), the metal semiconductor FET. In addition to silicon and Gallium arsenide semiconductors used as bipolar and FET, other semiconductor materials and structures such as InP and high electron mobility transistors have been developed. Concerning integration of semiconductor circuits, semicustomed and full customed design will advance into the gigabit per second (Gb/sec) range. With Broadband circuits for Gb/sec transmission, consideration should also be given to the possibilities of practical implementation of the design by thin or thick film technology. In a digital transmission system distinction must be made between analogue and digitally operating circuits. The rules of microwave technology have to be applied on implementation of circuits for a transmission system operating in the Gb/sec range. The computer-aided design program is intended to help simplify circuit analysis for the engineer and relieve him of a large amount of numerical mathematics.
