ABSTRACT
This chapter covers the design of broadband (BB) amplifiers. It deals with the design of BB Optoelectronic receivers (OER) using various photodiodes available and in future. OERs consist of a photodiode followed by an amplifier. Two principle structures can be used for preamplifiers of OERs: the transimpedance type (TIT) and the high impedance type (HIT). In the case of the TIT the photodiode operates on a preamplifier with low input impedance, which is achieved by means of feedback. In the case of the HIT the photodiode operates on a preamplifier with very high input impedance. To implement OERs in the gigabit per second range, BB amplifiers are necessary. Four basic components used in the construction of BB amplifiers of both types: shunt feedback stage with a bipolar transistor; series feedback stage with a bipolar transistor; bipolar transistor in common base configuration and metal semiconductor field effect transistor in common source configuration.
