ABSTRACT
This chapter begins with some comments on the necessity for proper vacuum practice. It discusses several aspects of homoepitaxy. The chapter presents the reader the various practical issues related to homoepitaxial silicon growth along with their scientific basis. It presents on actual growth procedures. The chapter discusses various sources for the silicon beam, control of the beam, temperature considerations, and uniformity considerations. It addresses the question of solid phase epitaxial regrowth of amorphously deposited silicon films. The chapter presents the salient points of homoepitaxy through the use of molecular beam deposition. MBE film growth occurs at relatively low temperatures by the rearrangement of impinging atoms into epitaxial positions. For this process to occur efficiently, the silicon surface must be atomically clean. Once clean, the cleanliness of the surface is maintained by the low vacuum level in the system. One of the concerns is verification, that in fact an atomically clean surface has been generated.
