ABSTRACT
Transparent conducting undoped and impurity-doped gallium indium oxide (GaInO3) thin films prepared by pulsed laser deposition (PLD) and reactive sputtering have exhibited resistivities of the order of 10−3 λ cm, very low optical absorption coefficients in the visible range, and a refractive index of 1.65, suitable for many applications. GaInO3 films prepared by magnetron sputtering without intentionally doping have exhibited a resistivity of the order of 10−3 λ cm and a band-gap energy of about 3.4 eV, values which are consistent with those of films prepared by PLD and reactive sputtering. In contrast, the refractive index of Ga2O3-In2O3 system films prepared by magnetron sputtering was gradually vary from about 1.8 to 2.1. It should be noted that there are three types of GaInO3 in ternary compounds composed of Ga2O3 and In2O3: hexagonal, monoclinic (β-Ga2O3 structure) and (Ga, In)2O3. Some of the ternary compound and multicomponent oxide films may exhibit properties that are suitable for specialized applications as transparent conducting oxide films. Therefore, the crystallographical, electrical, and optical properties of Ga2O3-In2O3 system films should be clarified for applications such as transparent conducting films. In this recipe, highly transparent and conductive Ga2O3-In2O3 system films prepared by dc magnetron sputtering are described.
