ABSTRACT
Principal microelectronic/nanoelectronic manufacturing processes are described with reference to silicon as a representative material. These include silicon purification and single-crystal growth techniques, thermal oxidation of silicon, mask making and lithographic techniques, wet and dry etching techniques, impurity diffusion and ion implantation, physical vapor deposition processes (thermal evaporation, molecular beam epitaxy, sputtering, laser ablation), chemical vapor deposition processes, viz. atmospheric pressure chemical vapor deposition (APCVD), low-pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD), along with metal organic chemical vapor deposition (MOCVD). Amongst the non-silicon processes, carbon nanotube (CNT) deposition techniques are outlined. Of primary interest to nanoelectronics are the nanolithography techniques of which several versions, e.g. deep UV, extreme UV, immersion lithography, electron beam, ion beam, and X-ray lithographies together with nanoimprint lithography, dip pen nanolithography, and the bottom-up block copolymer lithography, are explained.
