ABSTRACT
Silicon NanoFET, silicon nanowire transistor, and carbon nanotube (CNT) field-effect transistor (FET) constitute three prominent types of nanoscale FETs. Several short-channel effects are observed when downscaling silicon MOSFETs. These include drain-induced barrier lowering and threshold voltage roll-off, velocity saturation, hot-carrier effects, mobility degradation, and the regenerative feedback between avalanche breakdown and parasitic bipolar transistor. Silicon-on-insulator (SOI) MOSFET technology offers many advantages in dealing with short-channel effects. Relative merits/demerits of partially and fully depleted SOI MOSFET structures are brought out. Efficient gating action is realized with a FinFET structure. Silicon nanowire transistors have received increasing attention. There are two types of CNT FET structures, viz. Schottky-barrier CNT FET and MOSFET-like CNT FET. The MOSFET-like CNT FET is fabricated using patterned growth CNT bridge across molybdenum electrodes.
