ABSTRACT
Magnetoresistance is referred to as the change of the electrical
resistance of a material or device when an external magnetic field is
applied to it. There exist several magnetoresistance effects, includ-
ing anisotropic magnetoresistance (AMR), giant magnetoresistance
(GMR) and tunneling magnetoresistance (TMR). Recent studies
show that GMR-based devices could be mainly implemented in the
high current densities spintronic, while TMR structures are more
useful in the situations when low power dissipation becomes the
main priority.