ABSTRACT
Charge pum ping has proven its e lf as one o f the m o st ubiquitous techniqu es for characterizing defects in m etal-oxid e-sem icond uctor tran sistors. In th is chapter, w e first briefly review the basic theory and experim ental m ethodology. Next, we discuss several recen t charge-pum ping developm ents m ore aligned to the study o f m odern nanoscale devices. T his includes several im p ortan t m easu rem en t consid erations such as incom p lete trap-filling consid erations and solutions for dealing w ith high gate leakage cu rren t situations. We also discuss a m odern variant o f in terface d efect sp ectroscopy using the charge-pum ping m ethod as well as bulk d efect depth profiling via m ultifrequency im plem entation .
