ABSTRACT
Conventional silicon based nonvolatile memorie (NVM) devices, technology, and products had an impressive history of evolution over the decades since their inception. The general learning had also been incorporated into the stand-alone NVM devices and technology. This chapter discuses nonplanar NVM devices providing Short-Channel Effect (SCE) relief. Few-Electron Effects (FEE) fundamentally impacts all NVM parameters and limits scalability and reliability of planar FG and nanocrystal NVMs. Although feature-size scalability of conventional planar NVM devices and products had been impressive since inception, and continues till to date, the voltage scalability of the NVM devices and stack design had been limited due to the employment of oxide and/or oxynitride as tunnel dielectric and oxide or ONO as charge blocking dielectric layers. Conventional NVM devices and products are of two broad categories: the floating-gate NOR and NAND flashes and the charge-trapping NROM of the SONOS type.
