ABSTRACT
This chapter considers one of the emerging technologies: silicon NanoWire (SiNW) field-effect transistors (FETs), and makes the following contributions. It introduces SiNW FET-based camouflaging layout and polymorphic gates to help obfuscate layouts and netlists. SiNW FETs, or more precisely the polarity-controllable feature, provide an ideal candidate for camouflaging gates since all these gates share the same structure with only four SiNW FETs used. The characteristics of SiNW FETs prove to us that this new device is not a drop-in alternative to traditional MOSFETs. However, the polarity-controllable SiNW FETs, with their unique property, can help build camouflaging gates without using extra FETs. The polarity control gate does not reduce the number of transistors required to implement NAND and NOR using SiNW FET technology. To further reduce the surcharge, instead of incorporating more logic gates for logic locking, our approach is to replace some portions of the original netlist with SiNW FET-based polymorphic logic gates.
