ABSTRACT
People give more and more attention to low voltage and power dissipation of the product with the growth of different types of new electronic products (Chen and Yee, 2014). As an important module in the integrated circuit, bandgap reference is widely used in various circuits. So it has a great importance in reducing the power consumption of bandgap reference. The output voltage is generally about 1.2 V and has a greater power in the traditional structure. After Filanovsky designed a new structure of bandgap, which uses MOS only, bandgap reference in sub-threshold became a hot research in 2001 (Filanovsky et al., 2000). Magnelli and his colleague, for example, designed a reference circuit combining the peak current mirror with the MOS being in sub-threshold. The advantage of this reference circuit is that it has ultra-low supply voltage and ultra-low power consumption (Magnelli et al., 2011).
