ABSTRACT
The metal and semiconductor are in diffusive equilibrium. In the absence of applied bias, the Fermi level is constant across the junction. In the semiconductor, far from the junction, EF is close to the conduction-band minimum. As one approaches the metal, the semiconductor bands bend upward. At the junction, the difference between the conduction-band minimum and metal work function is given by e(ΦM-χ). An energy barrier
exists for electrons attempting to travel from the metal to the semiconductor. (The subscript n refers to an n-type semiconductor). This barrier, the Schottky barrier, cannot be changed by the application of a bias across the junction. The barrier against electron travel from the semiconductor to the metal is e(ΦM-ΦS), which can be changed with an applied bias.
