ABSTRACT

Considering the increasing commercial interest in SOI CMOS and the large popularity of BiCMOS platforms, it becomes natural to investigate the feasibility of BiCMOS-on-SOI devices that combine the advantages of both technologies [6,7]. As also mentioned in [8], SOI is a possible logical next step in the evolution of the bipolar device, after the optimization of the emitter with polysilicon and of the base with SiGe [8]. From these perspectives the recent demonstrations of SiGe HBTs fabricated on CMOS-compatible SOI substrates [9 -11] appear to be an attractive path for future SiGe BiCMOS scaling.