ABSTRACT
The power dissipation of complementary metal-oxide-semiconductor (CMOS) logic circuits comprises static and dynamic components. Static power dissipation is due to the leakage current of reverse-biased junctions, gate leakage current, and subthreshold current or other currents continuously drawn from the power supply. Dynamic power dissipation is caused by a short-circuit as well as the currents that charge and discharge loading capacitors.
