ABSTRACT
In a transistor, the reverse biased c-b junction behaves like a capacitor since the depletion region is an insulator. The capacitance is given as Ccb.
The forward biased b-e junction also possesses capacitance Cbe. • some of this capacitance is due to the presence of the depletion region • some of this capacitance is due to the finite speed of diffusion of charge
carriers across the junction and is significant when the input signal changes rapidly.
