ABSTRACT
This chapter presents a brief overview of the requirements for emerging nonvolatile memory technologies in order to be competitive compared to existing solutions, with a particular emphasis on embedded memories complementing complementary metal-oxide silicon logic circuits. It provides an introduction to the voltage-controlled magnetic anisotropy (VCMA) effect in layered magnetic material structures, which forms the basis for device applications. The chapter discusses experimental results on interfacial perpendicular magnetic anisotropy (PMA) in magnetic devices, and in particular the modulation of PMA by electric fields. It describes microwave manifestations of VCMA, as observed using ferromagnetic resonance (FMR) measurements. The chapter explains applications of the VCMA effect in switching of magnetization in nanoscale devices, and its implications for magnetic memory devices. The interfacial VCMA effect has been studied by microwave FMR measurements. Despite the potential advantages of Spin-Transfer Torque-magnetoresistive random access memory, it faces a number of fundamental and engineering challenges.
